ملخص: THe work described in this thesis covers twa-dimensional and one-dimentsional measurements carried on laterally constricted GaAs-Alo Ga As heterojunctions produced by wet etching.Analysis of the magnetoresistance oscillations showed clearly, in the Shubnikv-de Haas lineshape analysis, the difference between the quantum lifetime related to the phase of the wavefunvtion and the transport lifetime related to the mobility.The dingle plot was also found not to intercept at zero.As opposed to the case in Si-MOSFET, the conductivity peak was not found to be linearly dependent on the Landau level index number due to scattering change as the magnetic field was varied.

طبعة: Falmer: University of Sussex
لغة: إنجليزية
الوصف المادي: 110 p. ill. ;30 cm.
الشهادة: Doctorat
مؤسسة مناقشة الرسالة: University of Sussex

ملاحظة: Bibliogr pp.(103-110)