ملخص: Available from UMI in association with The British Library. Requires signed TDF. Strained layer quantum wells were investigated experimentally at high magnetic field and at high pressure, and with k.p theory calculations. Cyclotron resonance of p-type In_ {x}Ga_{1-x}Sb/GaSb quantum wells showed that the valence band is reconstructed by the strain such that the | M_ {J}|={3over2} subband has a light mass. Masses as low as 0.07 were recorded. Simple inter-band spectra were observed. Strain reconstruction gives a simple set of selection rules for the inter-band process. Agreement of the experiments with k.p theory calculations was good. The valence band of p-type In_ {0.18}Ga_{0.82} As/GaAs quantum wells was studied. Masses of 0.16 were measured. Filling factor related anomalies in the cyclotron resonance were observed and interpreted in terms of hole-hole interactions combined with the presence of localizing potentials. The magneto-exciton and band-filling were considered in the interpretation of the inter-band results. Magneto-transport experiments on the p-type In _{0.18}Ga_ {0.82}As/GaAs samples in tilted fields showed that the valence band spin has two dimensional behaviour. The effect was found to apply over a wide range of filling factor. Comparison of the Shubnikov-de Haas oscillations with the Landau level calculations determined an upper limit to the value of kappa^{L }, the spin-magnetic field coupling parameter. Photoluminescence at high pressure was used to measure the pressure coefficient and L_ {c} - Gamma_{c} crossover pressure of bulk GaSb. In_{x }Ga_{1-x}Sb/GaSb quantum wells had the same Gamma -gap pressure coefficient as bulk GaSb, a consequence of the similarity of GaSb and In_{0.15 }Ga_{0.85}Sb. Both quantum well L_{c} - Gamma _{c} and X_{c } - L_{c} crossovers were observed. High pressure photoluminescence measurements were carried out on highly strained GaSb/GaAs heterostructures. The pressure coefficient implies that the electrons are in a Gamma_{c} band, and the X_{c} - Gamma_ {c} crossover implies that the band alignment is type-II. The transition energy suggests that alloying of As into the GaSb layers has occurred.

طبعة: Oxford: Christ Church Oxford
لغة: إنجليزية
الوصف المادي: 174 p. ill. ;30 cm
الشهادة: Ph.D
مؤسسة مناقشة الرسالة: Christ Church Oxford

ملاحظة: Bibliogr.pp.164-174