ملخص: The modern microstructure fabrication technique, electron beam lighthography (EBL), is used to pattern low dimensional (2D, 1D and 0D) devices in GaAs/GaAlAs and GaSb/InAs heterostructures, which are investigated by magneto-transport at low temperatures. An anodisation technique for use on GaSb material has been studied. Capacitance-voltage (C-V) measurements on metal-insulator-substrate (MIS) devices indicate that the anodisation technique provides stable, low oxide charge (2.93 x 10 11cm-2), low mobile charge (1.53 x 10 11cm-2) and high resistivity (~ ) insulating film on GaSb substrates with good quality interface...

طبعة: Oxford: Hertford College, Oxford
لغة: إنجليزية
الوصف المادي: 218 p. ill. ;21 cm
الشهادة: Ph.D
مؤسسة مناقشة الرسالة: Hertford College, Oxford

ملاحظة: Bibliogr.p.218